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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
DC Characteristics
DC Characteristics
Table 27: DC Current Characteristics
Parameter
Input leakage current
Output leakage current
Symbol
I LI
I LO
Conditions
0V ≤ V IN ≤ V CC
0V ≤ V OUT ≤ V CC
Min
–
–
Typ
–
–
Max
±1
±1
Unit
μA
μA
Notes
1
VCC read
Random read
I CC1
CE# = V IL , OE# = V IH ,
–
26
31
mA
current
f = 5 MHz
Page read
CE# = V IL , OE# = V IH ,
–
12
16
mA
f = 13 MHz
VCC standby
current
256Mb
512Mb
I CC2
CE# = V CCQ ±0.2V,
RST# = V CCQ ±0.2V
–
–
65
70
210
225
μA
μA
1Gb
2Gb
–
–
75
150
240
480
μA
μA
VCC program/erase/blank
I CC3
Program/
V PP /WP# = V IL
–
35
50
mA
2
check current
erase
or V IH
controller
active
V PP /WP# =
V PPH
–
35
50
mA
V PP current
Read
I PP1
V PP /WP# ≤ V CC
–
0.2
5
μA
Standby
–
2
15
μA
Reset
PROGRAM operation
ongoing
ERASE operation
ongoing
I PP2
I PP3
I PP4
RST# = V SS ±0.2V
V PP /WP# = 12V ±5%
V PP /WP# = V CC
V PP /WP# = 12V ±5%
V PP /WP# = V CC
–
–
–
–
–
0.2
0.05
0.05
0.05
0.05
5
0.10
0.10
0.10
0.10
μA
mA
mA
mA
mA
Notes:
1. The maximum input leakage current is ±5μA on the V PP /WP# pin.
2. Sampled only; not 100% tested.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
57
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2012 Micron Technology, Inc. All rights reserved.
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